Daim ntawv thov ntawm Mosfet, IGBT thiab lub tshuab nqus tsev triode hauv kev lag luam induction cua sov tshuab (lub qhov cub)

Niaj hnub Induction cua sov zog muab cov thev naus laus zis feem ntau tso siab rau peb hom kev siv hluav taws xob tseem ceeb: MOSFET, IGBT thiab lub tshuab nqus tsev triode, txhua tus ua lub luag haujlwm tsis tuaj yeem hloov pauv hauv cov ntawv thov tshwj xeeb. MOSFET tau dhau los ua qhov kev xaiv thawj zaug hauv kev ua kom sov siab vim nws cov yam ntxwv zoo heev zaus (100kHz-1MHz), thiab tshwj xeeb tshaj yog haum rau cov khoom siv hluav taws xob tsawg thiab kev ua haujlwm siab xws li cov hniav nyiaj hniav kub yaj thiab cov khoom siv hluav taws xob vuam. Ntawm lawv, SiC / GaN MOSFET tau nce kev ua haujlwm ntau dua 90%, tab sis nws lub zog txwv (feem ntau

Hauv thaj tsam nruab nrab-ntau zaus thiab lub zog siab (1kHz-100kHz), IGBT tau qhia txog kev sib tw muaj zog. Raws li cov cuab yeej tseem ceeb ntawm kev lag luam melting furnaces thiab hlau Kev kho cua sov cov kab ntau lawm, IGBT modules tau yooj yim ua tiav MW-theem fais fab tso zis. Nws cov thev naus laus zis paub tab thiab tus nqi zoo heev ua rau nws xaiv tus qauv rau kev ua cov ntaub ntawv xws li steel thiab aluminium alloys. Nrog rau kev qhia txog SiC thev naus laus zis, kev khiav hauj lwm zaus ntawm cov tiam tshiab ntawm IGBT tau tshaj 50kHz, ntxiv kev sib koom ua lag luam ua lag luam nyob rau hauv nruab nrab-frequency band.

Nyob rau hauv ultra-high-frequency thiab high-power scenarios (1MHz-30MHz), lub tshuab nqus tsev triodes tseem tuav txoj hauj lwm unshakable. Txawm hais tias nws yog tshwj xeeb hlau smelting, plasma tiam, los yog tshaj tawm cov khoom kis tau tus mob, lub tshuab nqus tsev triodes tuaj yeem muab MW-theem ruaj khov zog tso zis. Nws qhov tshwj xeeb high-voltage kuj thiab yooj yim tsav architecture ua rau nws yog ib qho kev xaiv zoo tshaj plaws rau kev ua cov hlau nquag xws li titanium thiab zirconium, txawm tias nws tsis tshua muaj txiaj ntsig (50% -70%) thiab cov nqi kho mob siab.

Kev txhim kho thev naus laus zis tam sim no qhia pom qhov tseeb ntawm kev sib koom ua ke: MOSFET txuas ntxiv nkag mus rau hauv qhov chaw muaj zog thiab lub zog siab dhau los ntawm SiC / GaN thev naus laus zis; IGBT txuas ntxiv nthuav dav kev ua haujlwm zaus los ntawm cov khoom siv tshiab; thaum lub tshuab nqus tsev vacuum ntsib kev sib tw siab los ntawm cov khoom siv hauv lub xeev thaum tswj hwm lawv cov txiaj ntsig ultra-siab zoo. Qhov kev hloov kho thev naus laus zis no tau hloov kho qhov chaw ua haujlwm ntawm induction cua sov khoom siv.

Hauv kev xaiv tiag tiag, engineers yuav tsum tau ua tib zoo xav txog peb yam tseem ceeb ntawm zaus, lub zog thiab kev lag luam: MOSFET yog qhov zoo dua rau qhov muaj zaus thiab lub zog qis, IGBT yog xaiv rau nruab nrab zaus thiab lub zog siab, thiab lub tshuab nqus tsev triodes tseem xav tau rau ultra-siab zaus thiab siab zog. Nrog rau kev nce qib ntawm kev siv tshuab dav hlau semiconductor, cov qauv kev xaiv no yuav hloov pauv, tab sis nyob rau hauv lub neej yav tom ntej, peb hom khoom siv yuav txuas ntxiv mus ua lub luag haujlwm tseem ceeb hauv lawv qhov kev ua tau zoo, thiab koom tes txhawb kev tsim cov tshuab cua sov induction mus rau kev ua tau zoo dua thiab meej.